Comprehensive Model of Electron Conduction in Oxide-Based Memristive Devices

Memristive devices are two-terminal that can change their resistance state upon application of appropriate voltage stimuli. The be tuned over a wide range enabling applications such as multibit data storage or analog computing-in-memory concepts. One the most promising classes memristive is based on valence mechanism in oxide-based devices. In these devices, configurational oxygen defects, i.e. vacancies, leads to device resistance. A microscopic understanding conduction necessary order design with specific properties. this paper, we discuss proposed literature and propose comprehensive, model class To develop picture conduction, ab initio simulation models developed. These simulations suggest two different types which both limited by tunneling through Schottky barrier at metal electrode contact. difference between mechanisms following: for first type, electrons tunnel into band and, second vacancy defect states. differ current relation, has been detected experimentally. origin resistive switching identical modification distance due induced screening barrier. This may help optimized terms dynamic applications.